2SD2422 datasheet(1/2 Pages) ISC

No. de pieza	2SD2422

Descripción Electrónicos	isc Silicon NPN Darlington Power Transistor

PDF	2 Pages

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Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

Página de inicio	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

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isc Silicon NPN Darlington Power Transistor

2SD2422

DESCRIPTION

·

Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 100V(Min)

·

Collector-Emitter Saturation Voltage-

: VCE(sat)= 1.5V(Max.) @IC= 3A

·

High DC Current Gain

: hFE= 1000(Min) @ IC= 2A, VCE= 3V

APPLICATIONS

·

High power switching applications

·

Hammer driver,pulse motor driver applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

100

V

VCEO

Collector-Emitter Voltage

100

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

7

A

ICM

Collector Current-Peak

10

A

PC

Collector Power Dissipation

@ TC=25℃

30

W

Collector Power Dissipation

@ Ta=25℃

2.0

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

Número de pieza similar - 2SD2422

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2SD2422 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

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