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2SD2161 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza 2SD2161
Descripción Electrónicos  isc Silicon NPN Darlington Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SD2161 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
Product Specification
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Darlington Power Transistor
2SD2161
DESCRIPTION
·
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min)
·
High DC Current Gain-
: hFE= 2000(Min)@ (VCE= 2V, IC= 2A)
·
Low Collector Saturation Voltage-
: VCE(sat)= 1.5V(Max)@ (IC= 2A, IB= 2mA)
APPLICATIONS
·
Designed for low-frequency power amplifiers and low-
speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
10
A
IB
Base Current-Continuous
0.5
A
PC
Collector Power Dissipation
@Ta=25℃
2
W
Collector Power Dissipation
@TC=25℃
20
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃


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