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2SD311 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD311 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor 2SD311 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;Ib=0 400 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.2A 1.2 V VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 1.2A 1.5 V hFE DC Current Gain IC=7.5A; VCE= 5V 30 60 ICBO Collector Cutoff Current VCB= 750V; IE= 0 1.0 mA ICEO Collector Cutoff Current VCE= 400V; IB= 0 5.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA |
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