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ASM3P2853 Datasheet(PDF) 3 Page - ON Semiconductor |
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ASM3P2853 Datasheet(HTML) 3 Page - ON Semiconductor |
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3 / 7 page ![]() ASM3P2853A Rev. 2 | Page 3 of 7 | www.onsemi.com Absolute Maximum Ratings Symbol Parameter Rating Unit VDD, VIN Voltage on any pin with respect to Ground -0.5 to +4.6 V TSTG Storage temperature -65 to +125 °C Ts Max. Soldering Temperature (10 sec) 260 °C TJ Junction Temperature 150 °C TDV Static Discharge Voltage (As per JEDEC STD22- A114-B) 2 KV Note: These are stress ratings only and are not implied for functional use. Exposure to absolute maximum ratings for prolonged periods of time may affect device reliability. Operating Conditions Parameter Symbol Condition / Description Min Typ Max Unit Supply Voltage VDD 2.5V ± 5% 2.375 2.5 2.625 V Ambient Operating Temperature Range TA -40 - +85 °C Crystal Resonator Frequency FXIN 25 MHz Output Driver Load Capacitance CL - - 15 pF Crystal Specifications Fundamental AT cut parallel resonant crystal Nominal frequency 25MHz Frequency tolerance ±50ppm or better at 25°C Operating temperature range -25°C to +85°C Storage temperature -40°C to +85°C Load capacitance 18pF Shunt capacitance 7pF maximum ESR 25 Ω Note: CY is Load Capacitance and Rx is used to prevent oscillations at overtone frequency of the Fundamental frequency. Typical Crystal Interface Circuit CY = 2*(CP – CS), Where CP = Load capacitance of crystal from crystal vendor datasheet CS = Stray capacitance due to CIN, PCB, Trace etc. CY Rx CY Crystal R XIN XOUT |
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