BUT92 datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

isc Product Specification

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isc Silicon NPN Power Transistor

BUT92

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 50mA; IB= 0

250

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= 50mA; IC= 0

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 35A; IB= 3.5A

IC= 12.5A; IB= 0.625A; Tj= 100℃

1.2

1.9

VBE(sat)

Base-Emitter Saturation Voltage

IC=35A; IB= 3.5A

IC=35A; IB= 3.5A; Tj= 100℃

1.5

ICER

Collector Cutoff Current

VCE= 250V; RBE= 10Ω

VCE= 250V; TC=100℃

0.2

ICEV

Collector Cutoff Current

VCE= 250V; VBE= -1.5V

VCE=250V;TC=100℃

IEBO

Emitter Cutoff Current

VEB= 7V; IC= 0

1.0

VCE(3s)

Collector-Emitter

Dynamic Voltage

VCC = 200V IB1 = 5.25 A

RC = 5.7 Tj = 100 oC

VCE(5s)

Collector-Emitter

Dynamic Voltage

VCC = 200V IB1 = 5.25 A

RC = 5.7 Tj = 100 oC

diC/dt

Rated of Rise on-state

Collector Current

VCC = 200V IB1 = 5.25 A RC = 0

tp = 3s Tj = 100 oC

125

A/s

Switching Times; Resistive Load

Storage Time

VCC = 200 V VClamp = 250 V

IC = 35 A IB1 = 3.5 A

VBB = -5 V LC = 0.28 mH

RB2 = 0.7 Tj = 100 oC

Fall Time

0.4

Crossover Time

0.7

VCEW

Maximum Collector

Emitter Voltage

without Snubber

VCC = 50 V ICWoff = 52 A

VBB = -5 V IB1 = 3.5 A

LC = 48 H RB2 = 0.7 

Tj = 125 oC

250

* Pulsed : Pulse duration = 300 s, duty cycle = 2%

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