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TIP35F Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

No. de pieza TIP35F
Descripción Electrónicos  isc Silicon NPN Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

TIP35F Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
2
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
TIP35F
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 30mA; IB= 0
160
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 15A; IB= 3A
2.5
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 25A; IB= 6.25A
5.0
V
VBE(on)-1
Base-Emitter On Voltage
IC= 15A ; VCE= 4V
2.0
V
VBE(on)-2
Base-Emitter On Voltage
IC= 25A ; VCE= 4V
4.0
V
ICEO
Collector Cutoff Current
VCE= 90V; IB= 0
1.0
mA
ICBO
Collector Cutoff Current
VCB= 200V; IE= 0
0.7
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
1.0
mA
hFE-1
DC Current Gain
IC= 1.5A ; VCE= 4V
25
hFE-2
DC Current Gain
IC= 15A ; VCE= 4V
8
fT
Current-Gain—Bandwidth Product
IC= 1A ; VCE= 10V; ftest= 1.0MHz
3
MHz
Switching Times
ton
Turn-On Time
IC= 15A; IB1= -IB2= 1.5A;
VBE(off)= 4.15V; RL= 2Ω
1.2
μ
s
toff
Turn-Off Time
0.9
μ
s



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