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M45PE80 Datasheet(PDF) 29 Page - STMicroelectronics

No. de pieza M45PE80
Descripción Electrónicos  8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface
PDF  36 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M45PE80 Datasheet(HTML) 29 Page - STMicroelectronics

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M45PE80
Table 12. AC Characteristics
Note: 1. tCH + tCL must be greater than or equal to 1/ fC
2. Value guaranteed by characterization, not 100% tested in production.
Test conditions specified in Table 8. and Table 9.
Symbol
Alt.
Parameter
Min.
Typ.
Max.
Unit
fC
fC
Clock Frequency for the following
instructions: FAST_READ, PW, PP,
PE, SE, DP, RDP, WREN, WRDI,
RDSR
D.C.
25
MHz
fR
Clock Frequency for READ
instructions
D.C.
20
MHz
tCH
1
tCLH
Clock High Time
18
ns
tCL
1
tCLL
Clock Low Time
18
ns
Clock Slew Rate 2 (peak to peak)
0.03
V/ns
tSLCH
tCSS
S Active Setup Time (relative to C)
10
ns
tCHSL
S Not Active Hold Time (relative to C)
10
ns
tDVCH
tDSU
Data In Setup Time
5
ns
tCHDX
tDH
Data In Hold Time
5
ns
tCHSH
S Active Hold Time (relative to C)
10
ns
tSHCH
S Not Active Setup Time (relative to C)
10
ns
tSHSL
tCSH
S Deselect Time
200
ns
tSHQZ
2
tDIS
Output Disable Time
15
ns
tCLQV
tV
Clock Low to Output Valid
15
ns
tCLQX
tHO
Output Hold Time
0
ns
tRLRH
2
tRST
Reset Pulse Width
10
µs
tRHSL
tREC
Reset Recovery Time
3
µs
tSHRH
Chip should have been deselected
before Reset is de-asserted
10
ns
tWHSL
Write Protect Setup Time
50
ns
tSHWL
Write Protect Hold Time
100
ns
tDP
2
S to Deep Power-down
3
µs
tRDP
2
S High to Standby Mode
30
µs
tPW
Page Write Cycle Time
11
25
ms
tPP
Page Program Cycle Time
1.2
5
ms
tPE
Page Erase Cycle Time
10
20
ms
tSE
Sector Erase Cycle Time
1
5
s



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