ACST8-8CFP datasheet(6/10 Pages) STMICROELECTRONICS

6 / 10 page

ACST8

6/10

Figure

Relative

variation

thermal

impedance versus pulse duration (TO-220AB /

D2PAK)

Figure 9: On-state characteristics (maximum

values)

Figure 10: Surge peak on-state current versus

number of cycles

Figure 11: Non repetitive surge peak on-state

current for a sinusoidal pulse with width tp <

10ms, and corresponding value of I2t

Figure 12: Relative variation of gate trigger

current, holding current and latching current

versus junction temperature (typical values)

Figure 13: Relative variation of critical rate of

decrease of main current versus reapplied dV/

dt (typical values)

1.E-02

1.E-01

1.E+00

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

TO-220AB/D PAK

K=[Z /R ]

t (°C)

Zth(j-c)

Zth(j-a)

100

234

Tj=25°C

Tj=125°C

Tj max. :

Vto = 0.95 V

Rd = 50 m

Ω

(A)

out

t (°C)

100

1000

Non repetitive

Tj initial=25°C

Repetitive

Tc=90°C

t=20ms

(A)

TSM

Number of cycles

100

1000

0.01

0.10

1.00

10.00

(A), I t (A s)

TSM

t (ms)

T initial=25°C

ITSM

I t

dI/dt limitation:

100A/µs

0.0

0.5

1.0

1.5

2.0

2.5

3.0

-40 -30 -20 -10

20 30

60 70

90 100 110 120 130

IGT & IH

, [T

GT I

I , I [T =25°C]

jGT

T (°C)

0.1

1.0

10.0

100.0

(dI/dt)c[(dV/dt)c] / Specified (dI/dt)c

dV/dt(V/µs)

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