PESDXUSB3S_SER

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© NXP Semiconductors N.V. 2016. All rights reserved.

Product data sheet

Rev. 3 — 26 April 2016

4 of 19

NXP Semiconductors

PESDxUSB3S series

ESD protection for differential data lines

6.

Characteristics

6.1 Channel characteristics

[1]

This parameter is guaranteed by design.

[2]

100 ns Transmission Line Pulse (TLP); 50

; pulser at 70 to 90 ns.

[3]

According to IEC 61000-4-5 (8/20

s).

6.2 Frequency characteristics

[1]

Normalized to attenuation at 1 MHz.

Table 6.

Channel characteristics

Symbol Parameter

Conditions

Min

Typ

Max

Unit

diode capacitance

[1] -0.45

-pF

reverse leakage current

-

1

100

nA

breakdown voltage

69-

V

forward voltage

-

0.8

-

V

dynamic resistance

TLP

[2]

positive transient

-

0.16

-



negative transient

-

0.16

-



surge

[3]

positive transient

-

0.25

-



negative transient

-

0.25

-



Table 7.

Frequency characteristics

Symbol Parameter

Conditions

Min

Typ

Max

Unit

cut-off frequency

[1] -17

-GHz