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IRLML6402 Datasheet(PDF) 2 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

No. de pieza IRLML6402
Descripción Electrónicos  Plastic-Encapsulate Mosfets
PDF  4 Pages
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Fabricante Electrónico  HOTTECH [GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.]
Página de inicio  http://www.hottech.net.cn/
Logo HOTTECH - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

IRLML6402 Datasheet(HTML) 2 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

  IRLML6402 Datasheet HTML 1Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. IRLML6402 Datasheet HTML 2Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. IRLML6402 Datasheet HTML 3Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. IRLML6402 Datasheet HTML 4Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.  
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Repetitive rating; pulse width limited by
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
––– –––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

––– –––
p-n junction diode.
VSD
Diode Forward Voltage
––– ––– -1.2
V
TJ = 25°C, IS = -1.0A, VGS = 0V
‚
trr
Reverse Recovery Time
–––
29
43
ns
TJ = 25°C, IF = -1.0A
Qrr
Reverse RecoveryCharge
–––
11
17
nC
di/dt = -100A/µs
‚

max. junction temperature.
Notes:
‚ Pulse width ≤ 400µs; duty cycle ≤ 2%.
Source-Drain Ratings and Characteristics
-1.3
-22
A
S
D
G
ƒ Surface mounted on 1" square single layer 1oz. copper FR4 board,
steady state.
„ Starting TJ = 25°C, L = 1.65mH
RG = 25Ω, IAS = -3.7A.
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
10
100
0.1
1
10
100
20µs PULSE WIDTH
T = 25 C
J
°
TOP
BOTTOM
VGS
-7.00V
-5.00V
-4.50V
-3.50V
-3.00V
-2.70V
-2.50V
-2.25V
-V
, Drain-to-Source Voltage (V)
DS
-2.25V
1
10
100
0.1
1
10
100
20µs PULSE WIDTH
T = 150 C
J
°
TOP
BOTTOM
VGS
-7.00V
-5.00V
-4.50V
-3.50V
-3.00V
-2.70V
-2.50V
-2.25V
-V
, Drain-to-Source Voltage (V)
DS
-2.25V
10
100
2.0
3.0
4.0
5.0
6.0
7.0
8.0
V
= -15V
20µs PULSE WIDTH
DS
-V
, Gate-to-Source Voltage (V)
GS
T = 25 C
J
°
T = 150 C
J
°
-60 -40 -20 0
20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
J
°
V
=
I =
GS
D
-4.5V
-3.7A
Page:P4 -P2
GUANGDONG
HOTTECH
INDUSTRIAL
CO., LTD.
Plastic-Encapsulate Mosfets
IRLML6402



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