Case:SOT-23

SURFACE MOUNT SWITCHING DIODE

BAS19 - BAS21

Silicon planar epitaxial high speed diode

For switching and general purpose applications

Parameter

Test Conditions

Type

Symbol

Value

Unit

Working peak reverse voltage

BAS19

100

V

gg

=DC Blocking voltage

BAS20

RWM

150

V

BAS21

200

V

Repetitive peak reverse voltage

BAS19

120

V

g

BAS20

200

V

BAS21

250

V

Peak forward surge current

t=1

ms

2.5

A

g

t=1s

0.5

A

Repetitive peak forward current

625

mA

Average forward current

200

mA

Forward current

400

mA

Power dissipation

250

mW

Junction and storage

temperature range

–55...+150

°C

Features

A

E

J

L

TOP VIEW

M

B

C

H

G

D

K

SOT-23

Dim

Min

Max

A

0.37

0.51

B

1.20

1.40

C

2.30

2.50

D

0.89

1.03

E

0.45

0.60

G

1.78

2.05

H

2.80

3.00

J

0.013

0.10

K

0.903

1.10

L

0.45

0.61

M

0.085

0.180

a

0

°

8

°

All Dimensions in mm

Mechanical Data

Weight: 0.008 grams (approximate)

_C

Parameter

Test Conditions

Type

Symbol

Min

Typ

Max

Unit

Forward voltage

1.0

V

g

1.25

V

Reverse current

100

nA

100

mA

Reverse breakdown voltage

BAS19

120

V

g

BAS20

200

V

BAS21

250

V

Reverse recovery time

50

ns

Diode capacitance

5

pF

Dynamic forward resistance

5

W

°C unless otherwise specified

Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.

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