SS8050

TRANSISTOR (NPN)

Publication Order Number: [SS8050]

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

MAXIMUM RATING @ Ta=25°C unless otherwise noted

Symbol

Parameter

Value

Unit

Collector-Base Voltage

40

V

Collector-Emitter Voltage

25

V

Emitter-Base Voltage

5

V

Collector Current

1.5

A

Collector Dissipation

0.3

W

Tj

Junction Temperature

150

°C

Tstg

Storage Temperature

-55 to +150

°C

ELECTRICAL CHARACTERISTICS @ Ta=25°C unless otherwise specified

Symbol

Parameter

Test Conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

40

V

Collector-emitter breakdown voltage

25

V

Emitter-base breakdown voltage

5

V

Collector cut-off current

0.1

μA

Collector cut-off current

0.1

μA

Emitter cut-off current

0.1

μA

DC current gain

120

400

40

Collector-emitter saturation voltage

0.5

V

Base-emitter saturation voltage

1.2

V

Transition frequency

VCE=10V, IC= 50mA, f=30MHz

100

MHz

CLASSIFICATION OF hFE(1)

Rank

L

H

J

Range

120-200

200-350

300-400