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SS8050 Datasheet(PDF) 1 Page - Diode Semiconductor Korea |
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SS8050 Datasheet(HTML) 1 Page - Diode Semiconductor Korea |
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1 / 4 page ![]() Silicon Epitaxial Planar Transistor SS8050 FEATURES Collector Current.(IC= 1.5A) Complementary To SS8550. Collector dissipation:PC=300mW(TC=25℃) APPLICATIONS High Collector Current. SOT-23 ORDERING INFORMATION Type No. Marking Package Code SS8050 Y1 SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Ratings Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 1.5 A PC Collector Dissipation 300 mW Tj,Tstg Junction and Storage Temperature -55~150 ℃ Pb Lead-free Diode Semiconductor Korea www.diode.kr |
Número de pieza similar - SS8050 |
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Descripción similar - SS8050 |
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