30± 0.3

φ3.

2± 0

.15

2.4± 0.2

2.2± 0.2

1.0± 0.1

10± 0.2 7.5± 0.2 7.5± 0.2

3.7± 0.2

4.7± 0.25

0.8± 0.15

2.8± 0.2

FEATURES

Rating to 1000V PRV

Surge overload rating to 200 Am peres peak

Ideal for printed circuit board

Reliable low cos t cons truction utilizing m olded

plas tic technique res ults in inexpens ive product

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25

am bient tem perature unles s otherwis e s pecified.

Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.

KB

J

8D

KB

J

8G

KB

J

8J

KB

J

8K

KB

J

8M

UNITS

Maximum recurrent peak reverse voltage

200

400

600

800

1000

V

Maximum RMS voltage

140

280

420

560

700

V

Maximum DC blocking voltage

200

400

600

800

1000

V

Maximum average forw ard

Output current

@T

Peak forw ard surge current

8.3ms single half-sine-w ave

superimposed on rated load

Maximum instantaneous forw ard voltage

at 4.0 A

V

Maximum reverse current

@T

μA

at rated DC blocking voltage

@T

mA

Typical junction capacitance per element

pF

Typical thermal resistance

/W

Operating junction temperature range

Storage temperature range

KBJ

8A

KBJ

8B

50

100

1.0

2.Dev ice mounted on 300mm X 300mm X 1.6mm cu Plate heatsink.

1.0

A

8.0

A

KBJ8A --- KBJ8M

SILICON BRIDGE RECT IFIERS

200.0

KBJ

100

70

VOLT AGE RANGE: 50 --- 1000 V

CURRENT :

8.0 A

35

50

Lead s olderable per MIL-STD-202 m ethod 208

Polarity:Sym bols m olded on body

Mounting pos ition: Any

MECHANCAL DATA

Weight:0.23 ounces , 6.6 gram s

NOTES:1.Measured at 1.0MH

- 55 ---- + 150

- 55 ---- + 150

55

1.6

10.0

Dimensions in millimeters

Diode Semiconductor Korea

www.diode.kr