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MMBD4448HT Datasheet(PDF) 2 Page - Diode Semiconductor Korea |
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MMBD4448HT Datasheet(HTML) 2 Page - Diode Semiconductor Korea |
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2 / 3 page ![]() Surface Mount Fast Switching Diode MMBD4448HT/HTA/HTC/HTS ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN MAX UNIT Reverse breakdown voltage V(BR)R IR=2.5μA 80 V Leakage current IR VR=70V VR=20V 0.1 25 μA nA Forward voltage VF IF=5mA IF=10mA IF=100mA IF=150mA 0.62 0.72 0.855 1.0 1.25 V Typical total capacitance CT VR=6V,f=1MHz 3.5 pF Reverse recovery Time trr VR=6V,IF=5mA 4.0 ns TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified www.diode.kr Diode Semiconductor Korea |
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