STPS30H100CW datasheet(3/5 Pages) STMICROELECTRONICS

No. de pieza	STPS30H100CW

Descripción Electrónicos	HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

PDF	5 Pages

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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STPS30H100CW/CT

3/5

1E-3

1E-2

1E-1

1E+0

100

120

140

160

180

200

220

240

t(s)

IM(A)

Tc=25°C

Tc=150°C

Tc=75°C

δ=0.5

Fig. 5: Non repetitive surge peak forward current ver-

sus overload duration (maximum values, per diode).

203040

5060708090

100

1E-5

1E-4

1E-3

1E-2

1E-1

1E+0

2E+0

VR(V)

IR(mA)

Tj=125°C

Tj=25°C

Fig. 7: Reverse leakage current versus reverse

voltage applied (typical values, per diode).

1E-4

1E-3

1E-2

1E-1

1E+0

0.0

0.2

0.4

0.6

0.8

1.0

tp(s)

Zth(j-c)/Rth(j-c)

δ=tp/T

Single pulse

δ = 0.5

δ = 0.2

δ = 0.1

Fig. 6: Relative variation of thermal impedance

junction to case versus pulse duration.

100

200

500

1000

VR(V)

C(pF)

F=1MHz

Tj=25°C

Fig. 8: Junction capacitance versus reverse

voltage applied (typical values, per diode).

0.2

0.4

0.6

0.8

1.2

100

125

150

T (°C)

P(t )

(25°C)

ARM p

ARM

Fig. 4: Normalized avalanche power derating

versus junction temperature.

0.001

0.01

0.1

0.01

0.1

100

1000

t (µs)

P(t )

(1µs)

ARM p

ARM

Fig. 3: Normalized avalanche power derating

versus pulse duration.

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