1

3

2

PIN

10.2± 0.2

4.0± 0.3

2.6± 0.15

1.4± 0.1

0.6± 0.1

4.5± 0.2

3.1

+0.2

-0.1

2.6± 0.2

0.6± 0.1

FEATURES

MECHANICAL DATA

Position: Any

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25

am bient tem perature unless otherwise specified.

UNITS

Maximum recurrent peak reverse voltage

V

Maximum RMS Voltage

V

Maximum DC blocking voltage

V

Maximum average forw ard total device

A

Peak forw ard surge current 8.3ms single half

A

Maximum forward

)

)

voltage

)

(Note 1)

Maximum reverse current

@T

at rated DC blocking voltage

@T

Maximum thermal resistance (Note2)

/W

Operating junction temperature range

Storage temperature range

2. Thermal resistance from junction to case.

m A

30

35

40

45

50

60

80

100

3

0

200

21

25

28

32

35

42

56

70

30

35

40

45

50

60

80

100

VOLTAGE RANGE: 30 - 100 V

CURRENT: 30 A

Metal silicon junction, m ajority carrier conduction.

Case:JEDEC ITO-220AB,m olded plastic body

SCHOTTKY BARRIER RECTIFIERS

High current capacity, low forward voltage drop.

NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.

-

55 ---- + 150

-

55 ---- + 150

Term inals:Solderable per MIL-STD-750,

1 1

Method 2026

1.0

0.2

6.8

4.4

ITO-220AB

MBRF3030CT---MBRF30100CT

MBRF MBRF MBRF MBRF MBRF MBRF MBRF MBRF

3

030CT 3035CT 3040CT 3045CT 3050CT 3060CT 3080CT 30100CT

Guard ring for over voltage protection.

High surge capacity.

For use in low voltage, high frequency inverters, free

Polarity: As m arked

Weight: 0.08ounce, 2.24 grams

60

40

V

0.57

0.70

0.65

-

0.80

0.85

Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.

Dimensions in millimeters

0.84

0.95

0.95

0.72

0.85

0.75

Diode Semiconductor Korea

www.diode.kr