BGS5 datasheet(1/9 Pages) BEREX

No. de pieza	BGS5

Descripción Electrónicos	40-4000 MHz SILICON GERMANIUM Gain Block

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Fabricante Electrónico	BEREX [BeRex Corporation]

Página de inicio	http://www.berex.com

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1

Rev. D

BeRex

●website: www.berex.com

●email: sales@berex.com

Specifications and information are subject to change and products may be discontinued without notice. BeRex is a trademark of BeRex.

40-4000 MHz SILICON GERMANIUM Gain Block

BGS5

 Single Fixed 3V supply

 No Dropping Resistor Required

 No matching circuit needed

 Lead-free/Green/RoHS compliant SOT-363 package

 Application: Driver Amplifier, Cellular, PCS, GSM,

UMTS, WCDMA, Wireless Data

BeRex’s BGS5 is a high SiGe HBT MMIC am-

plifier, internally matched to 50 Ohms with-

out the need for external components. De-

signed to run directly from a 3V supply. The

BGS5 is designed for high linearity 3V gain

block applications . It is packaged in a RoHS-

compliant with SOT-363 surface mount

package.

Product Description

Device Features

 Driver Amplifier

 Cellular, PCS, GSM, UMTS, WCDMA

Applications

Applications Circuit

*C1, C2, C3 =100 pF ± 5%; C4 = 1000 pF ± 5%; C5 = 10uF; **L1 = 56nH

1 Device performance _ measured on a BeRex evaluation board at 25°C, 50 Ω system.

2 OIP3 _ measured with two tones at an output of 0 dBm per tone separated by 1 MHz.

Typical Performance

1

Absolute Maximum Ratings

Min.

Typical

Max.

Unit

Bandwidth

40

4000

MHz

IC @ (Vc = 3V)

46

52

58

mA

VC

3.0

V

dG/dT

-0.001

dB/°C

RTH

130

°C/W

Parameter

Unit

Rating

Operating Case Temperature

°C

-40 to +85

Storage Temperature

°C

-55 to +155

Junction Temperature

°C

150

Operating Voltage

V

+3.5

Supply Current

mA

110

Input RF Power

dBm

15

Operation of this device above any of these parameters may result in permanent damage.

**less than 56nH improves RF performance at over 0.5GHz.

*820nH or higher value L1 improves RF performance at under 500MHz.

*Optimum value of L1 may vary with board design.

BGS5

L1

C1

C3

C4

RFin

RFout

C5

+3V

C2

*C1,C2=2000pF, L1=820nH for 50MHz application.

BS5

X

IN

GND

OUT

GND

Pin Description

RF IN

3

RF OUT

6

GND

1,2,4,5

Part Marking (X: Wafer number)

Application Circuit Values Example

Freq.

70~900MHz

900MHz ~ 3GHz

3GHz ~ 4GHz

C1/C2

2nF

100pF

10pF

L1

(1608 Chip Ind.)

1uH

56nH

12nH

Parameter

Frequency

Unit

70

900

1900

2140

2650

3500

MHz

Gain

17.3

16.5

15

14.6

13.8

13.3

dB

S11

-16

-17

-19

-40

-16.3

dB

S22

-14

-15

-13

-14

-17

-16.9

dB

OIP3

2

32.5

31.5

28.5

28

27

24.6

dBm

P1dB

15.5

16.2

15.4

15

14.5

13.7

dBm

N.F

2.2

2.5

2.7

2.8

3

2.7

dB

*C1,C2=10pF, L1=12nH for 3.5GHz application.

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