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SS2015 Datasheet(PDF) 4 Page - SEC Electronics Inc.

No. de pieza SS2015
Descripción Electrónicos  CMOS High Sensitivity Micropower Hall Latch
PDF  6 Pages
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Fabricante Electrónico  SECELECTRONICS [SEC Electronics Inc.]
Página de inicio  http://www.secsemi.com
Logo SECELECTRONICS - SEC Electronics Inc.

SS2015 Datasheet(HTML) 4 Page - SEC Electronics Inc.

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SS2015
CMOS High Sensitivity Micropower Hall Latch
4
V3.10
Nov 1, 2013
Magnetic Characteristics
Operating Parameters: TA = 25°C, VDD =12V
Parameter
Symbol
Min
Type
Max
Units
Operating Point
BOP
5
70
Gs
Release Point
BRP
-70
-5
Gs
Hysteresis
BHYST
80
Gs
ESD Protection
Human Body Model (HBM) tests according to: Mil. Std. 883F method 3015.7
Parameter
Symbol
Limit Values
Unit
Notes
Min
Max
ESD Voltage
VESD
±4
kV
Performance Characteristics
Unique Features
CMOS Hall IC Technology
The chopper stabilized amplifier uses switched capacitor techniques to eliminate the amplifier offset voltage,
which, in bipolar devices, is a major source of temperature sensitive drift. CMOS makes this advanced technique
possible. The CMOS chip is also much smaller than a bipolar chip, allowing very sophisticated circuitry to be
placed in less space. The small chip size also contributes to lower physical stress and less power consumption.
Installation Comments
Consider temperature coefficients of Hall IC and magnetic, as well as air gap and life time variations. Observe
temperature limits during wave soldering. Typical IR solder-reflow profile:
No Rapid Heating and Cooling.
Recommended Preheating for max. 2minutes at 150°C
Recommended Reflowing for max. 5seconds at 240°C



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