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CPC3708 Datasheet(PDF) 2 Page - IXYS Corporation

No. de pieza CPC3708
Descripción Electrónicos  Depletion Mode FET
PDF  6 Pages
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Fabricante Electrónico  IXYS [IXYS Corporation]
Página de inicio  http://www.ixys.com
Logo IXYS - IXYS Corporation

CPC3708 Datasheet(HTML) 2 Page - IXYS Corporation

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INTEGRATED CIRCUITS DIVISION
www.ixysic.com
2
R03
CPC3708
Parameter
Symbol
Conditions
Min
Typ
Max
Units
Gate-to-Source Voltage
V
GS
I
D=60mA, VDS=5V
-1.005
-
-1.735
V
Gate-to-Source Off Voltage
V
GS(off)
I
D=2A, VDS=10V, VDS=100V
-2
-
-3.6
V
Drain-to-Source Leakage Current
I
DS(off)
V
GS= -5V, VDS=190V
-
-
20
nA
V
GS= -5V, VDS=350V
-
-
1
A
Drain Current
I
D
V
GS= -2.7V, VDS=5V, VDS=50V
-
-
5
mA
V
GS= -0.57V, VDS=5V
130
-
-
mA
On-Resistance
R
DS(on)
V
GS= -0.35V, IDS=50mA
-
8
14
Gate Leakage Current
I
GSS
V
GS=±20V
-
-
100
nA
Gate Capacitance
C
ISS
V
DS= VGS=0V
-
-
300
pF
Electrical Characteristics @25oC (Unless Otherwise Specified)
Absolute Maximum Ratings are stress ratings. Stresses in
excess of these ratings can cause permanent damage to the
device. Functional operation of the device at conditions beyond
those indicated in the operational sections of this data sheet is
not implied.
Absolute Maximum Ratings @ 25ºC
Thermal Resistance
Package
Parameter
Symbol
Conditions
Min
Typ
Max
Units
SOT-89
Junction to Case
RJC
--
-
50
ºC/W
Junction to Ambient
RJA
90
SOT-223
Junction to Case
RJC
--
-
14
Junction to Ambient
RJA
55
Parameter
Ratings
Units
Drain-to-Source Voltage (V
(BR)DSX)
350
V
Gate-to-Source Voltage (V
GS)
±20
V
Total Package Dissipation 1
SOT-89
1.1
W
SOT-223
2.5
Operational Temperature
-40 to +110
oC
Storage Temperature
-40 to +125
oC
1 Mounted on 1"x1" FR4 board.



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