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IRF225 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza IRF225
Descripción Electrónicos  High Speed Applications
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IRF225 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  IRF225 Datasheet HTML 1Page - Inchange Semiconductor Company Limited IRF225 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
1
isc N-Channel MOSFET Transistor
IRF225
DESCRIPTION
·Drain Current ID=3.3A@ TC=25℃
·Drain Source Voltage-
: VDSS= 250V(Min)
·Static Drain-Source On-Resistance
: RDS(on) =1.5Ω(Max)
·High Speed Applications
APPLICATIONS
·Switching power supplies
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
250
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
3.3
A
Ptot
Total Dissipation@TC=25℃
40
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
3.12
℃/W
Rth j-a
Thermal Resistance,Junction to Ambient
30
℃/W
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