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DMNH6008SCTQ Datasheet(PDF) 4 Page - Diodes Incorporated |
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DMNH6008SCTQ Datasheet(HTML) 4 Page - Diodes Incorporated |
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4 / 6 page ![]() DMNH6008SCTQ Document number: DS38700 Rev. 2 - 2 4 of 6 www.diodes.com April 2016 © Diodes Incorporated DMNH6008SCTQ 0 0.002 0.004 0.006 0.008 0.01 0.012 0.014 0.016 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Temperature V GS = 10V, ID = 20A 0 2 4 6 8 10 12 14 16 18 20 0 0.3 0.6 0.9 1.2 V SD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current T J = 125 oC T J = 85 oC T J = 25 oC T J = -55 oC V GS = 0V T J = 150 oC T J = 175 oC 10 100 1000 10000 0 5 10 15 20 25 30 35 40 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance f=1MHz C rss C oss C iss 0 2 4 6 8 10 0 10 20 30 40 Q g (nC) Figure 11. Gate Charge V DS = 30V, ID = 20A 0.01 0.1 1 10 100 1000 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area P W =10ms P W =100µs R DS(ON) Limited P W =1ms P W =100ms T J(Max) = 175℃ TC = 25℃ Single Pulse DUT on Infinite Heatsink V GS = 10V P W =1s P W =10µs P W =1µs 0 0.5 1 1.5 2 2.5 3 3.5 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Junction Temperature I D = 250μA I D = 1mA |
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