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DT430 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza DT430
Descripción Electrónicos  Collector-Emitter Breakdown Voltage
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

DT430 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
1
isc Silicon NPN Darlington Power Transistor
DT430
DESCRIPTION
·
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 300V(Min)
·
High DC Current Gain
: hFE= 2000(Min.)@ IC= 4A
·
Low Collector Saturation Voltage
: VCE(sat)= 3.0V(Max.)@ IC= 6A
APPLICATIONS
·
Switching for dynamotor excitation
·
General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
400
V
VCEO
Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
10
A
IB
Base Current-Continuous
1
A
PC
Collector Power Dissipation
@ TC=25℃
100
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃


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