J212 datasheet(1/1 Pages) INTERFET

No. de pieza	J212

Descripción Electrónicos	N-Channel Silicon Junction Field-Effect Transistor

PDF	1 Pages

Scroll/Zoom	100%

Fabricante Electrónico	INTERFET [InterFET Corporation]

Página de inicio	http://www.interfet.com

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1 / 1 page

01/99

B-57

J212

N-Channel Silicon Junction Field-Effect Transistor

Absolute maximum ratings at TA = 25¡C

Reverse Gate Source & Reverse Gate Drain Voltage

– 25 V

Continuous Forward Gate Current

10 mA

Continuous Device Power Dissipation

360 mW

Power Derating

3.27 mW/°C

TOÐ226AA Package

Dimensions in Inches (mm)

Pin Configuration

1 Drain, 2 Source, 3 Gate

Surface Mount

SMPJ212

At 25°C free air temperature:

J212

Process NJ26L

Static Electrical Characteristics

Min

Typ

Max

Unit

Test Conditions

Gate Source Breakdown Voltage

V(BR)GSS

– 25

V

IG = – 1 µA, VDS = ØV

Gate Reverse Current

IGSS

– 100

pA

VGS = – 15V, VDS = ØV

Gate Operating Current

IG

– 10

pA

VDS = 20V, ID = 1 mA

Gate Source Cutoff Voltage

VGS(OFF)

– 4

– 6

V

VDS = 15V, ID = 1 nA

Drain Saturation Current (Pulsed)

IDSS

15

40

mA

VDS = 15V, VGS = Ø V

Dynamic Electrical Characteristics

Common Source Forward Transconductance

gfs

7000

12000

µS

VDS = 15V, VGS = Ø V

f = 1 kHz

Common Source Output Conductance

gos

200

µS

VDS = 15V, VGS = Ø V

f = 1 kHz

Common Source Input Capacitance

Ciss

4pF

VDS = 15V, VGS = Ø V

f = 1 MHz

Common Source Reverse Transfer

Crss

1pF

VDS = 15V, VGS = Ø V

f = 1 MHz

Capacitance

Equivalent Short Circuit

¯eN

10

nV/

√Hz VDS = 15V, VGS = Ø V

f = 1 kHz

Input Noise Voltage

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Databook.fxp

1/13/99 2:09 PM

Page B-57

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