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BST70 Datasheet(PDF) 3 Page - NXP Semiconductors

No. de pieza BST70
Descripción Electrónicos  N-channel vertical D-MOS transistor
PDF  12 Pages
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BST70 Datasheet(HTML) 3 Page - NXP Semiconductors

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April 1995
3
Philips Semiconductors
Product specification
N-channel vertical D-MOS transistor
BST70A
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
Note
1. Transistor mounted on printed circuit board, max. lead length 4 mm, mounting pad for drain lead
min. 10 mm
× 10 mm.
Drain-source voltage
VDS
max.
80 V
Gate-source voltage (open drain)
VGSO
max.
20 V
Drain current (DC)
ID
max.
0.5 A
Drain current (peak)
IDM
max.
1.0 A
Total power dissipation up to Tamb =25 °C (note 1)
Ptot
max.
1 W
Storage temperature range
Tstg
− 65 to + 150 °C
Junction temperature
Tj
max.
150
°C
From junction to ambient (note 1)
Rth j-a
=
125 K/W



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