DMP32D4SW

Document number: DS35823 Rev. 3 - 2

2 of 6

www.diodes.com

March 2013

© Diodes Incorporated

DMP32D4SW

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

-30

V

Gate-Source Voltage

±20

V

Continuous Drain Current (Note 6)

250

200

mA

Pulsed Drain Current (Note 6)

-1

A

Characteristic

Symbol

Value

Units

Total Power Dissipation

(Note 5)

300

mW

(Note 6)

432

Thermal Resistance, Junction to Ambient

(Note 5)

398

°C/W

(Note 6)

290

Thermal Resistance, Junction to Case

(Note 5)

142

Operating and Storage Temperature Range

-55 to 150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

-30

-

-

V

-

-

-1

µA

Gate-Source Leakage

-

-

±10

µA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

-1.4

-

-2.4

V

Static Drain-Source On-Resistance

-

-

2.4

Ω

4

Forward Transfer Admittance

-

6

-

S

Diode Forward Voltage

-

0.8

1.2

V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

-

51.16

-

pF

f = 1.0MHz

Output Capacitance

-

10.85

-

pF

Reverse Transfer Capacitance

-

8.88

-

pF

Gate Resistance

-

275

-

Ω

Total Gate Charge

-

0.6

-

nC

Total Gate Charge

-

1.2

-

nC

Gate-Source Charge

-

0.2

-

nC

Gate-Drain Charge

-

0.3

-

nC

Turn-On Delay Time

-

9.86

-

ns

Turn-On Rise Time

-

11.5

-

ns

Turn-Off Delay Time

-

31.8

-

ns

Turn-Off Fall Time

-

21.9

-

ns

Notes:

5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout

7 .Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.