DMP32D4SW

Document number: DS35823 Rev. 3 - 2

4 of 6

www.diodes.com

March 2013

© Diodes Incorporated

DMP32D4SW

0.3

0.6

0.9

1.5

0

1.2

-50 -25

0

25

50

75

100 125

150

T , JUNCTION TEMPERATURE ( C)

J



Figure 7 On-Resistance Variation with Temperature

V= -10V

I=

A

GS

D

-1.0

V=

5V

I=

A

GS

D

-4.

-500m

1.2

1.4

1.6

1.8

2.2

2.4

2.6

2.0

-50 -25

0

25

50

75

100

125 150

T , AMBIENT TEMPERATURE (°C)

Figure 8 Gate Threshold Variation vs. Ambient Temperature

A

-I = 1mA

D

-I = 250µA

D

0.2

0.4

0.6

0.8

1.2

1.4

1.6

1.8

1.0

2.0

0

0

0.3

0.6

0.9

1.2

1.5

-V , SOURCE-DRAIN VOLTAGE (V)

Figure 9 Diode Forward Voltage vs. Current

SD

T= 25 C

A



T= -55 C

A



T= 85 C

A



T= 125 C

A



T= 150 C

A



100

10

1

0

5

10

15

20

25

30

-V , DRAIN-SOURCE VOLTAGE (V)

Figure 10 Typical Junction Capacitance

DS

f = 1MHz

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

Q , TOTAL GATE CHARGE (nC)

Figure 11 Gate-Charge Characteristics

g

0

2

4

6

8

10

V

= -10V

I= -1A

DS

D