BUZ12 datasheet(1/2 Pages) ISC

No. de pieza	BUZ12

Descripción Electrónicos	High input impedance

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Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

Página de inicio	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

1

isc N-Channel MOSFET Transistor

BUZ12

DESCRIPTION

·Static Drain-Source On-Resistance

: RDS(on) = 0.028Ω(Max)

·SOA is Power Dissipation Limited

·High input impedance

APPLICATIONS

designed for applications such as switching regulators,

switching converters, motor drivers,relay drivers and

drivers for high power bipolar switching transistors

requiring high speed and low gate drive power.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

ARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage (VGS=0)

50

V

VGS

Gate-Source Voltage

±20

V

ID

Drain Current-continuous@ TC=37℃

42

A

Ptot

Total Dissipation@TC=25℃

125

W

Tj

Max. Operating Junction Temperature

-55~150

℃

Tstg

Storage Temperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1

℃/W

Rth j-a

Thermal Resistance,Junction to Ambient

75

℃/W

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BUZ12 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

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