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BUZ100 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza BUZ100
Descripción Electrónicos  Ultra low on-resistance
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUZ100 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  BUZ100 Datasheet HTML 1Page - Inchange Semiconductor Company Limited BUZ100 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
1
isc N-Channel MOSFET Transistor
BUZ100
DESCRIPTION
·Static Drain-Source On-Resistance
: RDS(on) = 0.018Ω(Max)
·dv/dt rated
·Ultra low on-resistance
·175℃ operating temperature
APPLICATIONS
·High current , high speed switching
·Solenoid and relay drivers
·DC-DC & DC-AC converters
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
ARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
50
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=37℃
60
A
Ptot
Total Dissipation@TC=25℃
250
W
Tj
Max. Operating Junction Temperature
-55~175
℃
Tstg
Storage Temperature Range
-55~175
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
0.6
℃/W
Rth j-a
Thermal Resistance,Junction to Ambient
75
℃/W
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