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LM4900MM Datasheet(PDF) 15 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
No. de pieza LM4900MM
Descripción Electrónicos  265mW at 3.3V Supply Audio Power Amplifier with Shutdown Mode
PDF  19 Pages
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Fabricante Electrónico  NSC [National Semiconductor (TI)]
Página de inicio  http://www.national.com
Logo NSC - National Semiconductor (TI)

LM4900MM Datasheet(HTML) 15 Page - National Semiconductor (TI)

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Application Information (Continued)
(5)
R
F/Ri =AVD/2
(6)
From Equation 5, the minimum A
VD is 1.55; use AVD =2.
Since the desired input impedance was 20 k
Ω, and with a
A
VD of 2, a ratio of 1:1 of RF to Ri results in an allocation of
R
i =RF =20 kΩ. The final design step is to address the
bandwidth requirements which must be stated as a pair of
−3 dB frequency points. Five times away from a pole gives
0.17 dB down from passband response which is better than
the required ±0.25 dB specified.
f
L = 100Hz/5 = 20Hz
f
H = 20kHz x 5 = 100kHz
As stated in the External Components section, R
i in con-
junction with C
i create a highpass filter.
C
i ≥ 1/(2π*20 kΩ*20 Hz) = 0.397µF;
use 0.39µF
The high frequency pole is determined by the product of the
desired high frequency pole, f
H, and the differential gain,
A
VD. With a AVD = 2 and fH = 100kHz, the resulting GBWP
= 100kHz which is much smaller than the LM4900 GBWP of
25MHz. This figure displays that if a designer has a need to
design an amplifier with a higher differential gain, the
LM4900 can still be used without running into bandwidth
problems.
www.national.com
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