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JCS75N75F Datasheet(PDF) 3 Page - JILIN SINO-MICROELECTRONICS CO., LTD.

No. de pieza JCS75N75F
Descripción Electrónicos  High efficiency switching DC/DC converters and
PDF  11 Pages
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Fabricante Electrónico  JSMC [JILIN SINO-MICROELECTRONICS CO., LTD.]
Página de inicio  http://www.hwdz.com.cn
Logo JSMC - JILIN SINO-MICROELECTRONICS CO., LTD.

JCS75N75F Datasheet(HTML) 3 Page - JILIN SINO-MICROELECTRONICS CO., LTD.

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JCS75N75F
版本：201504B
3/11
电特性
ELECTRICAL CHARACTERISTICS
项
目
Parameter
符
号
Symbol
测试条件
Tests conditions
最大
Min
典型
Typ
最大
Max
单位
Units
关态特性
Off –Characteristics
漏－源击穿电压
Drain-Source Voltage
BV
B
DSS
B
I
B
D
B
=250μA, V
B
GS
B
=0V
75
-
-
V
击穿电压温度特性
Breakdown Voltage Temperature
Coefficient
ΔBV
B
DSS
B
/Δ
T
B
J
B
I
B
D
B
=1mA, referenced to 25℃
-
0.08 -
V/℃
零栅压下漏极漏电流
Zero Gate Voltage Drain Current
I
B
DSS
B
V
B
DS
B
=75V,V
B
GS
B
=0V, T
B
C
B
=25℃
-
-
1
μA
V
B
DS
B
=75V,
T
B
C
B
=125℃
-
-
10
μA
正向栅极体漏电流
Gate-body leakage current, forward
I
B
GSSF
B
V
B
DS
B
=0V, V
B
GS
B
=20V
-
-
100
nA
反向栅极体漏电流
Gate-body leakage current, reverse
I
B
GSSR
B
V
B
DS
B
=0V, V
B
GS
B
=-20V
-
- -100 nA
通态特性
On-Characteristics
阈值电压
Gate Threshold Voltage
V
B
GS(th)
B
V
B
DS
B
= V
B
GS
B
, I
B
D
B
=250μA
2.0
-
4.0
V
静态导通电阻
Static Drain-Source On-Resistance
R
B
DS(ON)
B
V
B
GS
B
=10V , I
B
D
B
=40A
-
9.0 11.0 mΩ
正向跨导
Forward Transconductance
g
B
fs
B
V
B
DS
B
= 10V , I
B
D
B
=40A（note 4） -
68
-
S
动态特性
Dynamic Characteristics
输入电容
Input capacitance
C
B
iss
B
V
B
DS
B
=25V,
V
B
GS
B
=0V,
f=1.0MH
B
Z
B
- 4230
-
pF
输出电容
Output capacitance
C
B
oss
B
-
821
-
pF
反向传输电容
Reverse transfer capacitance
C
B
rss
B
-
55
-
pF



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