ACE4922B datasheet(2/6 Pages) ACE

2 / 6 page

ACE4922BEM

Dual N-Channel Enhancement Mode Field Effect Transistor

VER 1.1

Absolute Maximum Ratings

Parameter

Symbol

Max

Unit

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±20

Drain Current

Continuous

115

Pulsed

IDP*1

800

Reverse Drain Current

Continuous

IDR

115

Pulsed

IDR*1

800

Total Power Dissipation

Pd*2

225

Channel Temperature

Tch

150

Storage Temperature Range

Tstg

-55 to150

Note:

Pw≦10µs, Duty cycle≦1 %。

When mounted on a 1*0.75*0.062 inch glass epoxy board。

Electrical CharacteristicsTA=25 OC unless otherwise noted

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

OFF CHARACTERISTICS(Note 2)

Drain-Source Breakdown Voltage

V(BR)DSS

VGS=0V, ID=10µA

Zero Gate Voltage Drain Current

IDSS

VDS=60V, VGS=0V

1.0

Gate-source Leakage

IGSS

VGS=±20V, VDS=0V

±10

ON CHARACTERISTICS(Note 2)

Gate Threshold Voltage

VGS(th)

VDS=VGS , ID= 250uA

1.0

1.85

2.5

Static Drain-Source

On-Resistance

RDS(ON)

VGS=10V, ID=0.5A

7.5

VGS=5V, ID=0.05A

7.5

Forward transfer admittance

gFS

VDS=10V, ID=0.2A

DYNAMIC CHARACTERISTICS

Input Capacitance

Ciss

VDS=25V VGS=0V f=1.0MHz

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

3.0

5.0

SWITCHING CHARACTERISTICS

Turn-On Delay Time

Td(on)

ID=0.2A,VDD=30V,

VGS=10V,RL=150Ω,RG=10Ω

Turn-Off Delay Time

Td(off)

Note: Pw ≦ 300 µs, Duty cycle ≦ 1%

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