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BU931R Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BU931R Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn 2 isc Silicon NPN Power Transistor BU931R ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0; L= 10mH 400 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 7A; IB= 70mA 1.6 V V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 8 A; IB= 100mA 1.8 V V CE(sat)-3 Collector-Emitter Saturation Voltage IC= 10 A; IB= 250mA 1.8 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 8 A; IB= 100mA 2.2 V V BE(sat)-2 Base-Emitter Saturation Voltage IC= 10A; IB= 250mA 2.2 V ICES Collector Cutoff Current VCE= 450V;VBE= 0 VCE= 450V;VBE= 0;Tj= 125℃ 1.0 5.0 mA ICEO Collector Cutoff Current VCE= 400V;IB= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 50 mA hFE DC Current Gain IC= 5A; VCE= 10V 300 VECF C-E Diode Forward Voltage IF= 10A 2.8 V |
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