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BU920P Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BU920P Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn 1 isc Silicon NPN Darlington Power Transistor BU920P DESCRIPTION ·High Voltage ·DARLINGTON APPLICATIONS ·Designed for automotive ignition applications and inverter circuits for motor control. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage VBE= 0 400 V VCEO Collector-Emitter Voltage 350 V VEBO Emitter-Base Voltage 5 V IC Collector Current 10 A ICM Collector Current-peak 15 A IB Base Current 5 A PC Collector Power Dissipation @TC=25℃ 105 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.2 ℃/W |
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