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GB20SHT12-CAL Datasheet(PDF) 3 Page - GeneSiC Semiconductor, Inc.

No. de pieza GB20SHT12-CAL
Descripción Electrónicos  High Temperature Silicon Carbide Power Schottky Diode
PDF  5 Pages
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Fabricante Electrónico  GENESIC [GeneSiC Semiconductor, Inc.]
Página de inicio  http://www.genesicsemi.com/
Logo GENESIC - GeneSiC Semiconductor, Inc.

GB20SHT12-CAL Datasheet(HTML) 3 Page - GeneSiC Semiconductor, Inc.

  GB20SHT12-CAL_15 Datasheet HTML 1Page - GeneSiC Semiconductor, Inc. GB20SHT12-CAL_15 Datasheet HTML 2Page - GeneSiC Semiconductor, Inc. GB20SHT12-CAL_15 Datasheet HTML 3Page - GeneSiC Semiconductor, Inc. GB20SHT12-CAL_15 Datasheet HTML 4Page - GeneSiC Semiconductor, Inc. GB20SHT12-CAL_15 Datasheet HTML 5Page - GeneSiC Semiconductor, Inc.  
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Die Datasheet
GB20SHT12-CAL  
Feb 2015
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
Pg3 of 4
 
Mechanical Parameters
Die Dimensions
2.95 x 2.95
mm
2
Anode pad size
2.69 x 2.69
Die Area total / active
8.70/7.02
Die Thickness
360
µm
Wafer Size
100
mm
Flat Position
0
deg
Die Frontside Passivation
Polyimide
Anode Pad Metallization
4000 nm Al
Backside Cathode Metallization
400 nm Ni + 200 nm Au
Die Attach
Electrically conductive glue or solder
Wire Bond
Al ≤ 380 µm
Reject ink dot size
Φ ≥ 0.3 mm
Recommended storage environment
Store in original container, in dry nitrogen,
< 6 months at an ambient temperature of 23 °C
Chip Dimensions:
DIE
A
[mm]
2.95
B
[mm]
2.95
METAL
C
[mm]
2.69
D
[mm]
2.69
WIRE
BONDABLE
E
[mm]
2.65
F
[mm]
2.65



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