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2SD1340 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1340 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn 2 isc Silicon NPN Power Transistor 2SD1340 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA; IE= 0 1500 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 100mA; RBE= ∞ 800 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A 8.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A 1.5 V ICBO Collector Cutoff Current VCB= 800V; IE= 0 10 μ A IEBO Emitter Cutoff Current VEB= 4V; IC= 0 40 130 mA hFE DC Current Gain IC= 0.5A; VCE= 5V 8 fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V 3 MHz VECF C-E Diode Forward Voltage IF= 3.5A 2.0 V tf Fall Time IC= 3A, IB1= 0.8A, IB2= -1.6A; RL= 66.7Ω; VCC= 200V 0.7 μ s |
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