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2SC5218 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC5218 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 5 page  INCHANGE Semiconductor isc RF Product Specification isc website：www.iscsemi.cn 1 isc Silicon NPN RF Transistor 2SC5218 DESCRIPTION · High Gain Bandwidth Product fT = 9 GHz TYP. · High Gain, Low Noise Figure PG = 13.0 dB TYP., NF = 1.2 dB TYP @ f = 900 MHz APPLICATIONS · Designed for use in VHF ~ UHF amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 15 V VCEO Collector-Emitter Voltage 9 V VEBO Emitter-Base Voltage 1.5 V IC Collector Current-Continuous 50 mA PC Collector Power Dissipation @TC=25℃ 0.15 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
Número de pieza similar - 2SC5218 |
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Descripción similar - 2SC5218 |
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