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2SC4766 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

No. de pieza 2SC4766
Descripción Electrónicos  High Switching Speed
PDF  3 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SC4766 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  2SC4766 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2SC4766 Datasheet HTML 2Page - Inchange Semiconductor Company Limited 2SC4766 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Website：www.iscsemi.cn
2
isc Silicon NPN Power Transistor
2SC4766
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 300mA ; IC= 0
5
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 4.5A; IB= 1.3A
5.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 4.5A; IB= 1.3A
1.5
V
ICBO
Collector Cutoff Current
VCB= 1700V ; IE= 0
1.0
mA
IEBO
Emitter Cutoff Current
VEB= 5V ; IC= 0
66
200
mA
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
8
hFE-2
DC Current Gain
IC= 4.5A ; VCE= 5V
3.5
7.5
VECF
C-E Diode Forward Voltage
IF= 4.5A
2.0
V
fT
Current-Gain—Bandwidth Product
IC= 0.1A ; VCE= 10V
3
MHz
COB
Output Capacitance
IE=0 ; VCB=10V; ftest=1.0MHz
250
pF
Switching times; Resistive load
tstg
Storage Time
IC= 4.5A , IB1= 0.9A ; IB2= -1.8A
RL= 43Ω
3.0
μs
tf
Fall Time
0.2
μs



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