THS4502CD datasheet(2/40 Pages) TI

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THS4502

THS4503

SLOS352D − APRIL 2002 − REVISED JANUARY 2004

www.ti.com

ABSOLUTE MAXIMUM RATINGS

over operating free-air temperature range unless otherwise noted(1)

UNIT

Supply voltage, VS

16.5 V

Input voltage, VI

±V

Output current, IO (2)

150 mA

Differential input voltage, VID

4 V

Continuous power dissipation

See Dissipation Rating Table

Maximum junction temperature, TJ (3)

150

°C

Maximum junction temperature, continuous

operation, long term reliability TJ (4)

125

°C

Operating free-air

C suffix

°C to 70°C

Operating free-air

temperature range, TA

I suffix

−40

°C to 85°C

Storage temperature range, Tstg

−65

°C to 150°C

Lead temperature

1,6 mm (1/16 inch) from case for 10

seconds

300

°C

HBM

4000 V

ESD ratings:

CDM

1000 V

ESD ratings:

100 V

(1) Stresses above these ratings may cause permanent damage.

Exposure to absolute maximum conditions for extended periods

may degrade device reliability. These are stress ratings only, and

functional operation of the device at these or any other conditions

beyond those specified is not implied.

(2) The THS450x may incorporate a PowerPAD on the underside of

the chip. This acts as a heatsink and must be connected to a

thermally dissipative plane for proper power dissipation. Failure

to do so may result in exceeding the maximum junction

temperature which could permanently damage the device. See TI

technical brief SLMA002 for more information about utilizing the

PowerPAD thermally enhanced package.

(3) The absolute maximum temperature under any condition is

limited by the constraints of the silicon process.

(4) The maximum junction temperature for continuous operation is

limited by package constraints. Operation above this temperature

may result in reduced reliability and/or lifetime of the device.

This integrated circuit can be damaged by ESD. Texas

Instruments recommends that all integrated circuits be

handled with appropriate precautions. Failure to observe

proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to

complete device failure. Precision integrated circuits may be more

susceptible to damage because very small parametric changes could

cause the device not to meet its published specifications.

PACKAGE DISSIPATION RATINGS

θ (1)

POWER RATING(2)

PACKAGE

θJC

(

°C/W)

θJA

(

°C/W)

TA ≤ 25°C

TA = 85°C

D (8 pin)

38.3

97.5

1.02 W

410 mW

DGN (8 pin)

4.7

58.4

1.71 W

685 mW

DGK (8 pin)

54.2

260

385 mW

154 mW

(1) This data was taken using the JEDEC standard High-K test PCB.

(2) Power rating is determined with a junction temperature of 125

°C.

This is the point where distortion starts to substantially increase.

Thermal management of the final PCB should strive to keep the

junction temperature at or below 125

°C for best performance and

long term reliability.

RECOMMENDED OPERATING CONDITIONS

MIN

NOM

MAX

UNIT

Dual supply

±5

±7.5

Supply voltage

Single supply

4.5

Operating free-

C suffix

air temperature,

I suffix

−40

°C

PACKAGE/ORDERING INFORMATION

ORDERABLE PACKAGE AND NUMBER

TEMPERATURE

PLASTIC

SMALL OUTLINE

PLASTIC MSOP(1)

PowerPAD

PLASTIC MSOP(1)

SMALL OUTLINE

(D)

(DGN)

SYMBOL

(DGK)

SYMBOL

THS4502CD

THS4502CDGN

BCG

THS4502CDGK

ATX

°C to 70°C

THS4503CD

THS4503CDGN

BCK

THS4503CDGK

ATY

THS4502ID

THS4502IDGN

BCI

THS4502IDGK

ASX

−40

°C to 85°C

THS4503ID

THS4503IDGN

BCL

THS4503IDGK

ASY

(1) All packages are available taped and reeled. The R suffix standard quantity is 2500. The T suffix standard quantity is 250 (e.g., THS4502DT).

THS4502CD Datasheet(PDF) 2 Page - Texas Instruments

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