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2N6767 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza 2N6767
Descripción Electrónicos  VGS Rated at 짹20V
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2N6767 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
1
isc N-Channel MOSFET Transistor
2N6767
DESCRIPTION
·VGS Rated at ±20V
·Silicon Gate for fast switching speeds
·I
DSS 、RDS(ON) ，specified at elevated temperature
·Low drive requirements
APPLICATIONS
designed for high power ,high speed application ,such as
switching applies,UPS,AC and DC motor controls ,
relay and high energy pulse circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
ARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
350
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=37℃
12
A
Ptot
Total Dissipation@TC=25℃
150
W
Tj
Max. Operating Junction Temperature
-55~150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
0.83
℃/W
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