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2SC3996 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC3996 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor 2SC3996 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 800 V VCE(sat) Collector-Emitter Saturation Voltage IC= 12A; IB=3A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 12A; IB=3A 1.5 V ICBO Collector Cutoff Current VCB= 800V; IE= 0 10 μA ICES Collector Cutoff Current VCE= 1500V; RBE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 1A; VCE= 5V 8 40 hFE-2 DC Current Gain IC= 12A; VCE= 5V 4 8 tstg Storage Time IC= 12A, IB1=2.4A; IB2= -4.8A 3.0 μs tf Fall Time 0.2 μs |
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