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Motor de Búsqueda de Datasheet de Componentes Electrónicos |
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Motor de Búsqueda de Datasheet de Componentes Electrónicos |
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2SB981 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SB981 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc Silicon PNP Power Transistor 2SB981 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation APPLICATIONS ·Designed for high power amplifications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A ICP Collector Current-Pulse -12 A PC Collector Power Dissipation @ TC=25℃ 80 W Collector Power Dissipation @ Ta=25℃ 3 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
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