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2SB690 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB690 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 isc Silicon PNP Power Transistor 2SB690 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; RBE= ∞ -80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -10μ A; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A -2.0 V VBE(on) Base-Emitter On Voltage IC= -1A; VCE= -5V -1.5 V ICBO Collector Cutoff Current VCB= -80V; IE= 0 -0.1 mA hFE-1 DC Current Gain IC= -1A; VCE= -5V 60 200 hFE-2 DC Current Gain IC= -0.1A; VCE= -5V 35 COB Collector Output Capacitance IE= 0; VCB= -20V; f= 1MHz 75 pF fT Current-Gain —Bandwidth Product IC= -0.5A; VCE= -5V 20 MHz h FE-1 Classifications B C 60-120 100-200 |
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