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2SB683 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza 2SB683
Descripción Electrónicos  High Power Dissipation
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SB683 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：
www.iscsemi.cn
isc & iscsemi is registered trademark
1
isc Silicon PNP Power Transistor
2SB683
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = -100V(Min)
·High Power Dissipation
·Wide Area of Safe Operation
APPLICATIONS
·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-5
A
PC
Total Power Dissipation
@ Ta=25℃
1.5
W
Total Power Dissipation
@ TC=25℃
40
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-40~150
℃


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