65N06 datasheet(1/2 Pages) ISC

No. de pieza	65N06

Descripción Electrónicos	Drain Current ?밒D=63A@ TC=25C

PDF	2 Pages

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Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

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INCHANGE Semiconductor

isc Product Specification

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e：

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： www.iscsemi.com

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& iscsemi is registered trademark

1

isc N-Channel MOSFET Transistor

65N06

FEATURES

·

·Drain Current –ID=63A@ TC=25℃

·Drain Source Voltage-

: VDSS= 60V(Min)

·Static Drain-Source On-Resistance

: RDS(on) = 0.018Ω(Max)

DESCRIPTION

·Designed for low voltage, high speed switching applications in

power supplies,

converters and power motor controls, these

devices are particularly well suited for bridge circuits where

diode speed and commutating safe operating areas are critical

and offer additional safety margin against unexpected voltage

transients.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃

℃

℃)

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage

60

V

VGS

Gate-Source Voltage-Continuous

±20

V

ID

Drain Current-Continuous

63

A

IDM

Drain Current-Single Plused

240

A

PD

Total Dissipation @TC=25℃

150

W

TJ

Max. Operating Junction Temperature

175

℃

Tstg

Storage Temperature

-55~175

℃

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

1.05

℃/W

Rth j-a

Thermal Resistance, Junction to Ambient

62.5

℃/W

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65N06 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

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