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2SC3182 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC3182 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc Product Specification isc Website：www.iscsemi.cn isc Silicon NPN Power Transistor 2SC3182 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max.) @IC= 7A ·Good Linearity of hFE ·Complement to Type 2SA1265 APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A IB Base Current-Continuous 1 A PC Collector Power Dissipation @ TC=25℃ 100 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
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Descripción similar - 2SC3182 |
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