2N6835 datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc Silicon NPN Power Transistor

2N6835

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC=100mA ; IB=0

450

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 3A; IB= 0.4A

1.2

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= 5A; IB= 0.66A

IC= 5A; IB= 0.66A,TC=100℃

2.5

3.0

VBE(sat)

Base-Emitter Saturation Voltage

IC= 5A; IB= 0.66A

IC= 5A; IB= 0.66A,TC=100℃

1.5

ICEV

Collector Cutoff Current

VCEV= 850V;VBE(off)= 1.5V

VCEV= 850V;VBE(off)= 1.5V;TC=100℃

0.25

1.5

ICER

Collector Cutoff Current

VCE= 850V; RBE= 50Ω,TC= 100℃

2.5

IEBO

Emitter Cutoff Current

VEB= 6.0V; IC=0

1.0

hFE-1

DC Current Gain

IC= 5A ; VCE= 5V

7.5

hFE-2

DC Current Gain

IC= 8A ; VCE= 5V

Current Gain-Bandwidth Product

IC= 0.25A ;VCE= 10V; ftest=10MHz

MHz

COB

Output Capacitance

IE= 0; VCB= 10V; ftest=1.0kHz

350

Switching times;Resistive Load

Delay Time

IC= 5A , VCC= 250V;

IB1= 0.66A; IB2= -1.3A;

PW= 30μs; RB2= 4Ω

Duty Cycle≤2.0%

Rise Time

250

Storage Time

1000

2500

Fall Time

250

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