2SA1395 datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

Product Specification

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

isc Silicon PNP Power Transistor

2SA1395

ELECTRICAL CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= -1A; IB= -0.1A, L=1mH

-100

VCEX(SUS)-1

Collector-Emitter Sustaining Voltage

IC= -1A; IB1=-IB2= -0.1A,

L=180

μ H,clamped

-100

VCEX(SUS)-2

Collector-Emitter Sustaining Voltage

IC= -2A; IB1= -0.2A; IB2= 0.1A,

L=180

μ H,clamped

-100

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -1A; IB= -0.1A

-0.6

VBE(sat)

Base-Emitter Saturation Voltage

IC= -1A; IB= -0.1A

-1.5

ICBO

Collector Cutoff Current

VCB= -100V ; IE=0

-10

μ A

ICER

Collector Cutoff Current

VCE= -100V ; RBE= 51Ω ,Ta=125℃

-1.0

ICEX

Collector Cutoff Current

VCE= -100V; VBE(off)= -5V

VCE= -100V; VBE(off)= -5V,Ta=125℃

-10

-1.0

μ A

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

-10

μ A

hFE-1

DC Current Gain

IC= -0.1A; VCE= -5V

hFE-2

DC Current Gain

IC= -1A; VCE= -5V

200

Switching times

ton

Turn-on Time

IC= -1A ,RL= 50Ω ,

IB1= -IB2= -0.1A,VCC≈-50V

0.5

μ s

tstg

Storage Time

1.5

μ s

Fall Time

0.5

μ s

 h

FE-2 Classifications

40-80

60-120

100-200

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