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2N5551 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

No. de pieza 2N5551
Descripción Electrónicos  NPN high-voltage transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2N5551 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  2N5551 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2N5551 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
2
isc Silicon NPN Power Transistor
2N5551
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 10mA; IB= 1mA
0.15
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 50mA; IB= 5mA
0.2
V
VBE(sat)-1
Base-Emitter Saturation Voltage
IC= 10mA; IB= 1mA
1.0
V
VBE(sat)-2
Base-Emitter Saturation Voltage
IC= 50mA; IB= 5mA
1.0
V
ICBO
Collector Cutoff Current
VCB= 120V; IE= 0
VCB= 120V; IE= 0 Ta = 100 ℃
50
50
nA
uA
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
50
nA
hFE
DC Current Gain
IC= 1mA ; VCE= 5V
80
hFE
DC Current Gain
IC= 10mA ; VCE= 5V
80
250
hFE
DC Current Gain
IC= 50mA ; VCE= 5V
30
fT
Current-Gain—Bandwidth Product
IC= 10mA ; VCE= 10V
100
300
MHz



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