2N5401 datasheet(1/2 Pages) ISC

No. de pieza	2N5401

Descripción Electrónicos	PNP high-voltage transistor

PDF	2 Pages

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Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

Página de inicio	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

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isc Silicon PNP Power Transistor

2N5401

DESCRIPTION

·

PNP high-voltage transistor

·

Low current (max. 300 mA)

·

High voltage (max. 160 V)

·

Complements to 2N5551.

APPLICATIONS

·

Designed for Switching and amplification

in high voltage applications , such as telephony

applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-180

V

VCEO

Collector-Emitter Voltage

-160

V

VEBO

Emitter-Base Voltage

-6

V

IC

Collector Current-Continuous

0.3

A

ICM

Collector Current-Peak

0.6

A

IBM

Base Current-Peak

0.1

A

PC

Collector Power Dissipation

@ Ta<50℃

0.63

W

J

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

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2N5401 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

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